[Purposes] This paper aims to optimize the shape of the P+ doping region of the junction barrier Schottky (JBS) diose of siliconcarbide (SiC) by changing the strip-shaped P+ doping regions in conventional SiC JBS to the circular P+ doping regions, which are distributed between the Schottky contacts in regular triangles. [Methods] The forward and reverse characteristics of the above two SiC JBS structures were simulated by the three-dimensional structural finite element simulation method, and the width of the P+ doping region and the doping concentration of the epitaxial layer were optimized and compared. [Findings] The simulation results show that the reverse breakdown voltage is higher than 1 500 V for both structures, and the forward conduction voltage drop of the JBS diode with circular P+ doping region is lower than that of the JBS diode with strip-shaped P+ doping region. When the forward current density is 400 A/cm2, the conduction voltage drop decreases from 2.37 V in the strip-shaped P+ structure to 2.05 V in the circular P+ structure, which is reduced by 13.5%. After optimizing the doping concentration of the epitaxial layer in the circular P+ structure, the conduction voltage drop at a forward current density of 400 A/cm2 is 1.97 V, which is 16.9% lower than that of the strip P+ structure. Compared to the strip-shaped SiC JBS, the circular P+ structure has a larger Schottky contact area, ensuring breakdown voltage while achieving a lower conduction voltage drop. By optimizing the doping concentration of the epitaxial layer, the conduction voltage drop of the device is further intensified. [Conclusions] In this paper, the P+ doping region is adjusted from a strip shape to a circular one and arranged in a regular triangular distribution. This adjustment increases the Schottky contact area of the device, optimizes the forward conduction characteristics of the device, and further improves the conduction characteristics by optimizing the doping concentration of the epitaxial layer of the device. At the same time, a lower conduction voltage drop is obtained.